A new approach to determine the drain-and-source series resistance of LDD MOSFET's
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چکیده
منابع مشابه
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15 صفحه اولAn analytical source-and-drain series resistance model of quarter micron MOSFETs and its influence on circuit simulation
An analytical model to describe the bias dependent series resistances and of LDD MOSFETs down to quarter micron and below is introduced. Comparing measurement and simulation results of CMOS ring oscillators it has been found that for low voltage applications ( V) an incorrect description of and can cause a simulation error of up to 30 % in the delay time of CMOS inverters.
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ژورنال
عنوان ژورنال: IEEE Transactions on Electron Devices
سال: 1993
ISSN: 0018-9383
DOI: 10.1109/16.231580